1 ELM34415AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-case steady-state rjc 25 c /w maximum junction-to-ambient steady-state rja 50 c /w parameter symbol limit unit note drain-source voltage vds -30 v gate-source voltage vgs 25 v continuous drain current ta=25c id -12 a ta=70c -9 pulsed drain current idm -50 a 3 power dissipation ta=25c pd 2.5 w ta=70c 1.3 junction and storage temperature range tj, tstg -55 to 150 c ELM34415AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=-30v ? id=-13a ? rds(on) < 10.5m (vgs=-10v) ? rds(on) < 16m (vgs=-4.5v) 4 - pin configuration circuit sop-8(top view) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 single p-channel mosfet s g d
2 ELM34415AA-N electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=-250a, vgs=0v -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v -1 a vds=-20v, vgs= 0v, tj=125 c -10 gate-body leakage current igss vds=0v, vgs= 25v 100 na gate threshold voltage vgs(th) vds=vgs, id=-250 a -1.0 -1.5 -3.0 v on state drain current id(on) vgs=-10v, vds=-5v -50 a 1 static drain-source on-resistance rds(on) vgs=-10v, id=- 13a 9.0 10.5 m 1 vgs =- 4.5v, id =-10 a 13.0 16.0 m forward transconductance gfs vds =-1 0v, id =-13 a 29 s 1 diode forward voltage vsd is =if , vgs=0v -1.2 v 1 max. body -diode continuous current is -2.7 a pulsed body -diode current ism -4 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=-15v, f=1mhz 4200 pf output capacitance coss 1218 pf reverse transfer capacitance crss 504 pf switching parameters total gate charge qg vgs=-10v, vds=-15v id=-13a 42.0 58.0 nc 2 gate-source charge qgs 12.6 nc 2 gate-drain charge qgd 15.4 nc 2 turn - on delay time td(on) vgs=-10v, vds=-15v id-1a, rgen=6 16.8 ns 2 turn - on rise time tr 22.4 ns 2 turn - off delay time td(off) 7.0 ns 2 turn - off fall time tf 140.0 ns 2 ta=25 c single p-channel mosfet 4 - note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%.
3 typical electrical and thermal characteristics ELM34415AA-N single p-channel mosfet 4 - p-channel logic level enhancement mode field effect transistor p1003evg sop-8 lead-free niko-sem 3 mar-31-2006 body diode forward voltage variation with source current and temperature 25c -v - body diode forward voltage(v) 0.6 0.1 -is - reverse drain current(a) 0.0001 0 0.001 0.01 sd 0.2 0.4 v = 0v 10 1 100 t = 125c a gs 0.8 1.0 -55c 1.2
4 ELM34415AA-N single p-channel mosfet 4 - p-channel logic level enhancement mode field effect transistor p1003evg sop-8 lead-free niko-sem 4 mar-31-2006
|
